发明名称 |
COMPOSITION FOR INTERLAYER FILLER OF LAYERED SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING LAYERED SEMICONDUCTOR DEVICE |
摘要 |
Provided is a composition capable of forming an interlayer filler layer for a layered semiconductor device, said interlayer filler layer having a high K1c value, a high glass transition temperature and a low viscosity and assuring a stable bonding even if the surrounding environment varies. The composition comprises an epoxy compound (A) having a viscosity of 50 Pa·s or lower at 25°C, an amine compound (B) having a melting point or softening point of 80°C or higher, and another amine compound (C) having a melting point or softening point of lower than 80°C, wherein the amount of the amine compound (C) is 1 part by weight or more and less than 40 parts by weight per 100 parts by weight of the sum of the amine compound (B) and the amine compound (C). |
申请公布号 |
WO2014157626(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
WO2014JP59139 |
申请日期 |
2014.03.28 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
SUGIYAMA, MASAYA;KAWASE, YASUHIRO;IKEMOTO, MAKOTO;KIRITANI, HIDEKI;YAMAZAKI, MASANORI |
分类号 |
C08L63/00;C08K3/00;C08K5/17 |
主分类号 |
C08L63/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|