| 摘要 |
Provided are: a semiconductor device, which is provided with a plurality of kinds of resistors on a substrate, and which has a reduced number of manufacture steps compared with conventional cases; and a method for manufacturing the semiconductor device. A semiconductor device (1) is provided with: a first metal wiring layer (11) formed on a substrate (10); an interlayer insulating film (12) formed on the first metal wiring layer (11); a second metal wiring layer (23) formed on the interlayer insulating film (12); a first resistor having a first resistive metal film (14a) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15a) formed on the first resistive metal film (14a), and a second resistive metal film (16a) formed on the first insulating film (15a); and a second resistor having a first resistive metal film (14b) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15b) formed on the first resistive metal film (14b), and a second resistive metal film (16b) formed on the first insulating film (15b). |
