发明名称 WIRING BOARD
摘要 A wiring board includes a core substrate having a number of through-holes, and buildup insulating layers and buildup wiring layers alternately laminated on upper and lower surfaces of the core substrate, in which a first through-hole group is arranged in a first region in the core board at a first arrangement density, the first region being opposed to the semiconductor element connection pad formation region, a second through-hole group is arranged in a second region at a second arrangement density lower than the first arrangement density, the second region being located in an outer peripheral portion of the core substrate and away from the first region, and a third through-hole group is arranged in a third region at a third arrangement density higher than the second arrangement density, the third region being located between the first region and the second region.
申请公布号 US2014291005(A1) 申请公布日期 2014.10.02
申请号 US201414222077 申请日期 2014.03.21
申请人 KYOCERA SLC TECHNOLOGIES CORPORATION 发明人 FUKUSHIMA Hiroyuki;KUMOKAWA Fumio
分类号 H05K1/02 主分类号 H05K1/02
代理机构 代理人
主权项 1. A wiring board comprising: a core substrate having a number of through-holes; and buildup insulating layers and buildup wiring layers alternately laminated on upper and lower surfaces of the core substrate, the wiring board having a semiconductor element connection pad formation region where a number of semiconductor element connection pads made of the buildup wiring layer are arranged in a lattice-like form in a center of an upper surface, wherein a first through-hole group is arranged in a first region in the core substrate at a first arrangement density, the first region being opposed to the semiconductor element connection pad formation region, a second through-hole group is arranged in a second region at a second arrangement density lower than the first arrangement density, the second region being located in an outer peripheral portion of the core substrate and away from the first region, and a third through-hole group is arranged in a third region at a third arrangement density higher than the second arrangement density, the third region being located between the first region and the second region.
地址 Yasu-shi JP