发明名称 |
WIRING BOARD |
摘要 |
A wiring board includes a core substrate having a number of through-holes, and buildup insulating layers and buildup wiring layers alternately laminated on upper and lower surfaces of the core substrate, in which a first through-hole group is arranged in a first region in the core board at a first arrangement density, the first region being opposed to the semiconductor element connection pad formation region, a second through-hole group is arranged in a second region at a second arrangement density lower than the first arrangement density, the second region being located in an outer peripheral portion of the core substrate and away from the first region, and a third through-hole group is arranged in a third region at a third arrangement density higher than the second arrangement density, the third region being located between the first region and the second region. |
申请公布号 |
US2014291005(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201414222077 |
申请日期 |
2014.03.21 |
申请人 |
KYOCERA SLC TECHNOLOGIES CORPORATION |
发明人 |
FUKUSHIMA Hiroyuki;KUMOKAWA Fumio |
分类号 |
H05K1/02 |
主分类号 |
H05K1/02 |
代理机构 |
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代理人 |
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主权项 |
1. A wiring board comprising:
a core substrate having a number of through-holes; and buildup insulating layers and buildup wiring layers alternately laminated on upper and lower surfaces of the core substrate, the wiring board having a semiconductor element connection pad formation region where a number of semiconductor element connection pads made of the buildup wiring layer are arranged in a lattice-like form in a center of an upper surface, wherein a first through-hole group is arranged in a first region in the core substrate at a first arrangement density, the first region being opposed to the semiconductor element connection pad formation region, a second through-hole group is arranged in a second region at a second arrangement density lower than the first arrangement density, the second region being located in an outer peripheral portion of the core substrate and away from the first region, and a third through-hole group is arranged in a third region at a third arrangement density higher than the second arrangement density, the third region being located between the first region and the second region. |
地址 |
Yasu-shi JP |