ENCAPSULATION OF SEMICONDUCTOR DEVICE WITH MULTILAYER BARRIER USING PECVD OR ATOMIC LAYER DEPOSITION

摘要

Embodiments of a multi-layer environmental barrier for a semiconductor device and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor device is formed on a semiconductor die. The semiconductor die includes a semiconductor body and a passivation structure on the semiconductor body. A multi-level environmental barrier is provided on the passivation structure. The multi-layer environmental barrier is a low-defect multi-layer dielectric film that hermetically seals the semiconductor device from the environment. In one embodiment, the multi-layer environmental barrier has a defect density of less than 10 defects per square centimeter (cm2). By having a low defect density, the multi-layer environmental barrier serves as a robust barrier to the environment.