发明名称 ION SOURCE
摘要 <p>An ion source (200) includes an ion source chamber (202) having a longitudinal axis (212), the ion source chamber operative to define a plasma therein. The ion source also includes a split solenoid assembly (203) comprising a first solenoid (204) and a second solenoid (204) that are mutually disposed along opposite sides of the ion source chamber, where each of the first solenoid and second solenoid comprises a metal member (208) having a long axis parallel to the longitudinal axis of the ion source chamber, and a main coil (205) having a coil axis parallel to the long axis and comprising a plurality of windings that circumscribe the metal member. The main coil defines a coil footprint that is larger than an ion source chamber footprint of the ion source chamber.</p>
申请公布号 WO2014159402(A1) 申请公布日期 2014.10.02
申请号 WO2014US23433 申请日期 2014.03.11
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BUFF, JAMES
分类号 H01J37/08;H01J37/317 主分类号 H01J37/08
代理机构 代理人
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