| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device with reduced operating voltage and improved optical output.SOLUTION: A nitride semiconductor light-emitting device has a laminated body, a first electrode, a second electrode, a conductor layer, and a phosphor layer. The laminated body has a first layer including a first-conductivity-type layer, a second layer including a second-conductivity-type layer, and a light-emitting layer provided between the first layer and the second layer, and contains a nitride semiconductor. The laminated body has a step portion reaching to the second layer from a surface of the first layer in at least any of its center portion and its peripheral portion. The first electrode is provided on the surface of the first layer and reflects emission light from the light-emitting layer. The second electrode is surrounded by the light-emitting layer or is provided around the light-emitting layer, and is connected to the bottom surface of the step portion. The conductor layer is provided on a surface of the second layer located on the opposite side of the light-emitting layer. The phosphor layer covers a non-formation region of the conductor layer and the conductor layer of the surface of the second layer.</p> |
