发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit having a flat temperature characteristic even when there are manufacturing process variations.SOLUTION: After a semiconductor manufacturing process is complete, the electric characteristic of a semiconductor device is evaluated. At this point, the temperature characteristic of each reference voltage VREF of three unit reference voltage generation circuits 10 is also evaluated. Then, only a unit reference voltage generation circuit 10 having the most flat temperature characteristic is selected from among the three unit reference voltage generation circuits 10. Only fuses 13-14 of the selected unit reference voltage generation circuit 10 are not disconnected, but other fuses 13-14 are disconnected. Accordingly only the selected unit reference voltage generation circuit (10) operates, and the other unit reference voltage generation circuits (10) do not operate.</p>
申请公布号 JP2014186714(A) 申请公布日期 2014.10.02
申请号 JP20130267699 申请日期 2013.12.25
申请人 SEIKO INSTRUMENTS INC 发明人 YOSHINO HIDEO
分类号 G05F3/24 主分类号 G05F3/24
代理机构 代理人
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