METHOD OF FORMING AN INTEGRATED CIRCUIT

摘要

A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, the patterned mask layer having a plurality of first features with a first pitch. The method includes patterning the material layer by using the patterned mask layer as a mask to form the first features in the material layer. The method includes trimming the patterned mask layer, after patterning the material layer, to form a trimmed patterned mask layer. The method further includes introducing a plurality of dopants into the material layer exposed by the trimmed patterned mask layer to form doped regions having a second pitch, wherein the second pitch is different from the first pitch. The method further includes removing the trimmed patterned mask layer to expose un-doped regions in the material layer; and removing the un-doped regions to form a plurality of second features corresponding to the respective doped regions.

主权项

1. A method of forming an integrated circuit, the method comprising:
forming a patterned mask layer on a material layer, the patterned mask layer having a plurality of first features with a first pitch; patterning the material layer by using the patterned mask layer as a mask to form the first features in the material layer; trimming the patterned mask layer, after patterning the material layer, to form a trimmed patterned mask layer; introducing a plurality of dopants into the material layer exposed by the trimmed patterned mask layer to form doped regions having a second pitch, wherein the second pitch is different from the first pitch; removing the trimmed patterned mask layer to expose un-doped regions in the material layer; and removing the un-doped regions to form a plurality of second features corresponding to the respective doped regions.