发明名称 |
MEMORY CONTROLLER AND ASSOCIATED METHOD FOR GENERATING MEMORY ADDRESS |
摘要 |
A memory controller is connected to a double-data-rate dynamic random access memory (DDR DRAM) and an accessing unit. The memory controller includes: a processing unit, configured to receive a system address generated by the accessing unit; and a mapping unit, located in the processing unit, configured to convert the system address to a memory address and transmitting the memory address to the DDR DRAM. When a burst length of the DDR DRAM is L and L=2x (where L and x are positive integers), an (x+1)th bit of the memory address from a least significant bit (LSB) is included in a bank group address of the memory address. |
申请公布号 |
US2014293726(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201414228390 |
申请日期 |
2014.03.28 |
申请人 |
MStar Semiconductor, Inc. |
发明人 |
Chen Chung-Ching;Lin Chen-Nan;Chang Yung |
分类号 |
G11C8/18;G11C8/16 |
主分类号 |
G11C8/18 |
代理机构 |
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代理人 |
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主权项 |
1. A memory controller, connected to a double-data-rate dynamic random access memory (DDR DRAM) and an accessing unit, comprising:
a mapping unit, configured to convert a system address generated by the accessing unit into a memory address and to transmit the memory address to the DDR DRAM; wherein, a burst length of the DDR DRAM is L and L=2x, an (x+1)th bit from a least significant bit (LSB) of the memory address is in a bank group address, and L and x are positive integers. |
地址 |
Hsinchu Hsien TW |