SEMICONDUCTOR DEVICE WITH PCM MEMORY CELLS AND NANOTUBES AND RELATED METHODS

摘要

A semiconductor device may include a substrate, and an array of PCM memory cells above the substrate. Each PCM memory cell may include first and second vertically aligned electrodes, a first dielectric layer between the first and second electrodes, a carbon nanotube extending vertically through the first dielectric layer from the second electrode and toward the first electrode, and a PCM body between the first electrode and the at least one carbon nanotube.

主权项

1. A semiconductor device comprising:
a substrate; and an array of phase-change material (PCM) memory cells above said substrate, each PCM memory cell comprising
first and second vertically aligned electrodes,a first dielectric layer between said first and second electrodes,at least one carbon nanotube extending vertically through said first dielectric layer from said second electrode and toward said first electrode, anda PCM body between said first electrode and said at least one carbon nanotube.