THIN FILM TRANSISTOR

摘要

A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

主权项

1. A thin film transistor comprising:
a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode; and a gate electrode insulated with the semiconductor layer, the source electrode, and the drain electrode by an insulating layer; and a transition layer sandwiched between the semiconductor layer and the insulating layer, wherein the transition layer is a silicon-oxide cross-linked polymer layer comprising a plurality of Si atoms, and the plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.