| 摘要 |
The objective of the present invention is to provide a substrate processing device capable of increasing oxygen concentration in the vicinity of an outer periphery of a substrate transport unit rapidly to the oxygen concentration of air while retaining the interior of the substrate transport unit at a nitrogen atmosphere. In a substrate processing device (10) which applies plasma processing to a semiconductor wafer, the interior of a loader module (13) upon which is disposed a second transport device (20), which transports a wafer (W) from/to a FOUP placed on a FOUP platform (21), retains a positive-pressure nitrogen atmosphere with respect to the outside. A blower device (40) is disposed on an exterior upper side surface of the loader module (13), and by generating flow of air along the exterior side surface of the loader module (13) by way of the blower device (40), nitrogen gas leaking from the loader module (13) is diffused and caused to undergo convection, thereby rapidly increasing oxygen concentration in the vicinity of an outer periphery of the loader module (13) to the oxygen concentration of air. |
