发明名称 PHASE CHANGE MEMORY MASK
摘要 Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic.
申请公布号 WO2014158536(A1) 申请公布日期 2014.10.02
申请号 WO2014US17938 申请日期 2014.02.24
申请人 INTEL CORPORATION;CHU, DANIEL J. 发明人 CHU, DANIEL J.
分类号 G11C13/02 主分类号 G11C13/02
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