| 摘要 |
<p>Provided is a zinc oxide sputtering target whereby it is possible to fabricate a zinc oxide sputtered film of greater transparency and electroconductivity. This zinc oxide sputtering target is characterized in comprising a zinc oxide sintered compact including zinc oxide crystal particles constituting the main phase, and a dopant-containing spinel phase constituting a grain boundary phase. The degree of orientation of (002) of ZnO on the sputtering surface is at least 80%, the zinc oxide sintered compact has a density of at least 5.50 g/cm3, the number of spinel phases per unit area is at least 20/100μm2, and the spinel phase distribution index is no greater than 0.40.</p> |
