SILICON SINGLE CRYSTAL PRODUCTION APPARATUS, AND SILICON SINGLE CRYSTAL PRODUCTION METHOD

摘要

Provided is a silicon single crystal production apparatus, whereby it becomes possible to produce a silicon single crystal having high quality and a large size readily employing a casting method. The apparatus is equipped with: a crucible (3, 4) in which a seed crystal of a silicon single crystal is held on a part of the bottom surface thereof and in which solid and/or liquid silicon is also held; a heat-absorbing section in which heat generated on a region on which the seed crystal of the silicon single crystal is placed in the crucible (3, 4) can be absorbed through the bottom surface of the crucible (3, 4); and a heating section in which a region surrounding the region to be cooled by the heat-absorbing section can be heated with a heat source arranged below the bottom surface of the crucible (3, 4). In the apparatus, the vector (A) of a heat flux generated by the heat-absorbing section and the vector (B) of a heat flux generated by the heating section are controlled while keeping the relationship represented by the formula: A×B < 0.