2-TERMINAL SWITCHING DEVICE HAVING BIPOLAR SWITCHING PROPERTY AND RESISTANCE MEMORY CROSS-POINT ARRAY HAVING THE SAME
摘要
<p>Provided are a 2-terminal switching device having bipolar switching properties and a resistance memory device cross-point array having the same. The 2-terminal switching device has a first electrode and a second electrode. A pair of first conductive metallic oxide semiconductor layers is connected to the first electrode and the second electrode. A second conductive metallic oxide semiconductor layer is arranged between the first conductive metallic oxide semiconductor layers.</p>
申请公布号
KR20140116264(A)
申请公布日期
2014.10.02
申请号
KR20130030110
申请日期
2013.03.21
申请人
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
HONG, JIN PYO;BAE, YOON CHEOL;LEE, AH RHAM;BAEK, GWANG HO