| 摘要 |
PROBLEM TO BE SOLVED: To improve photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A photoelectric conversion device 11 includes: an electrode layer 2; a first semiconductor layer 3 which is disposed on the electrode layer 2 and contains a group I-III-VI compound; and a second semiconductor layer 4 which is disposed on the first semiconductor layer 3 and forms a pn junction with the first semiconductor layer 3. The first semiconductor layer 3 contains sulfur and selenium as group VI-B elements. In the first semiconductor layer 3, a sulfur ratio, i.e., the ratio of the atomic concentration of sulfur to the total atomic concentration of sulfur and selenium, increases from an inside portion in the thickness direction of the first semiconductor layer 3 toward a first surface on the electrode layer 2 side. |
