SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE AND COMPOSITE MODULE

摘要

PROBLEM TO BE SOLVED: To reduce forward voltage of a diode formed in a semiconductor element.SOLUTION: In a semiconductor element, by forming a trench 9 on a surface of a P-type diffusion layer 3 different from a MOS structure 55 formation region and ensuring conduction between the trench 9 and a body electrode 8, a contact area of the body electrode 8 with the P-type diffusion layer 3 increases thereby to enable reduction in forward voltage of diodes 12, 13 formed on the semiconductor element.