| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing ON-resistance.SOLUTION: The semiconductor device comprises: an n-type SiC substrate which has first and second surfaces and contains a p-type impurity and an n-type impurity, and in which an element A is used as the p-type impurity and an element D is used as the n-type impurity, a combination of the element A and the element D is at least one combination of Al, Ga or In, N, B and P, a ratio of a concentration of the element A to a concentration of the element D forming the combination, is more than 0.40 and less than 0.95, the concentration of the element D is equal to or more than 1×10cmand equal to or less than 1×10cm; a SiC layer provided on the first surface; a first electrode provided at the first surface side; and a second electrode provided on the second surface. |
