METHOD OF FORMING PNbZT FERROELECTRIC THIN FILM

摘要

A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode 11 formed on a substrate 10, prebaking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layer 12 having a thickness 45 to 90 nm thereon; coating a composition for forming a PNbZT-based ferroelectric film, containing 4 to 10 at % of Nb in 100 at % of all the perovskite B site atoms (Zr, Ti) contained in the composition, on the formed crystallization promoting layer 12 to form a coating film 13a of PNbZT thereon; and pre-baking the coating film 13a and then baking the coating film 13a to be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode 11.

主权项

1. A method of forming a niobium-doped lead zirconate titanate (PNbZT) ferroelectric thin film, the method comprising:
coating a composition for forming a ferroelectric thin film, which is formed of a lead zirconate titanate (PZT)-based composite perovskite film not containing Nb, on a lower electrode formed on a substrate, pre-baking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layer having a thickness of 45 to 90 nm on the lower electrode; coating a composition for forming a ferroelectric thin film, which is formed of a PNbZT-based composite perovskite film containing 4 to 10 at % of Nb in 100 at % of all the B site atoms (Zr, Ti), on the formed crystallization promoting layer to form a coating film of PNbZT on the crystallization promoting layer; and pre-baking the coating film and then baking the coating film to be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode.