SEMICONDUCTOR DEVICE HAVING GROOVE-SHAPED VIA-HOLE

摘要

The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

主权项

1. A semiconductor device comprising:
a substrate; a first guard ring which includes a first conductor formed in a first groove-shaped via-hole in a first insulating film, the first conductor being connected to the substrate; and a second guard ring which includes a second conductor formed in a second groove-shaped via-hole in the first insulating film, the second conductor being connected to the substrate; wherein: the second guard ring is surrounded by the first guard ring in a plan view; the first guard ring is connected to an aluminum layer; and each of the first groove-shaped via-hole and the second groove-shaped via-hole includes a pattern bent twice each time at an inner angle of larger than 90 degree at each of four corners of the device in a plan view.