SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention has a memory cell region in which memory cells are aligned in a first direction (Y direction) and a second direction (X direction) orthogonal to the first direction, a word line contact region adjacent to the memory cell region in the first direction (Y direction) interposed by a dummy pattern region, and first and second word lines that span a plurality of active regions aligned in the first direction (Y direction) and extend from the memory cell region to the word line contact region. A first word line and a second word line adjacent to each other within one active region located in the memory cell region constitute a word line pair. A gap in the second direction (X direction) between a first word line and a second word line that constitute a word line pair in the memory cell region is narrower than a gap in the second direction (X direction) in the word line contact region.