| 摘要 |
The objective of the present invention is, in a semiconductor element, for example, a Schottky barrier diode, to improve reverse surge resistance of a Schottky junction portion. A p-type semiconductor section (14) comprises a p+ type semiconductor portion (first concentration portion) (14a) and a p- type semiconductor portion (second concentration portion) (14b), for which impurity concentrations differ from each other. In addition, a portion of a side surface (13S) of a metal section (13), and a portion of a bottom surface (13B) which is connected to the side surface (13S), are caused to be in contact with a portion of the p+ type semiconductor portion (14a). Furthermore, for the p- type semiconductor portion (14b), at least a portion of a side surface (14bS) of the same is in contact with a side surface (14aS) of the p+ type semiconductor portion (14a). |
