MONOLITHIC INTEGRATED CIRCUIT (MMIC) STRUCTURE AND METHOD FOR FORMING SUCH STRUCTURE

摘要

A method for forming a semiconductor structure having a transistor device with a control electrode (20) for controlling a flow of carriers between & first electrode (16) and a second electrode (18). A. passivation layer (24) is deposited over the first electrode, the second electrode and the control electrode. An etch stop layer (26) is deposited on the passivation layer over the control electrode. A dielectric layer (40) is formed over the etch stop layer. A window is etched, through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode. A metal layer (34) is formed on a portion of the etch stop layer, and the dielectric layer is also formed on the metal layer. A second metal layer (56) is deposited on the portion of the dielectric layer formed on the first mentioned metal layer.