HANDLE SUBSTRATE FOR COMPOUND SUBSTRATE FOR USE WITH SEMICONDUCTOR

摘要

This handle substrate (11, 11A) is formed from an insulating polycrystalline material. The microscopic center-line average roughness (Ra) of the surface (15) of said handle substrate is less than or equal to 5 nm. Height differences (3) are provided between the exposed surfaces (2a) of crystal grains (2) exposed at the surface of this handle substrate.