THIN FILM TRANSISTOR, AMORPHOUS SILICON FLAT PANEL DETECTION SUBSTRATE, AND PREPARATION METHOD THEREFOR

摘要

A thin film transistor, an amorphous silicon flat panel detection substrate, and a preparation method therefor. The material of the source/drain of the thin film transistor is a conductor obtained by transforming the material of an active layer of an amorphous metal oxide, where the material is transformed by depositing an insulating object containing hydrogen ions not less than a set value, so that a gap between valence band energy levels of the source/drain and the active layer is narrowed; and moreover, the lattice matching is desirable and the electrical properties of the thin film transistor are improved.