| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor crystal of a nitride of a Group 13 metal in the Periodic Table by using an ammonothermal method which suppresses adhesion of multi-crystals to a single crystal to be grown and provides a single crystal having good crystallinity and allowing extraction of a large number of large-area substrates.SOLUTION: A method of producing a semiconductor crystal of a nitride of a Group 13 metal in the Periodic Table includes a growth step of growing a semiconductor crystal 108 of a nitride of a Group 13 metal in the Periodic Table on a seed crystal 101 in the presence of a nitrogen-containing solvent in a supercritical state and/or a subcritical state. In the growth step, at least a part of the upper-side area, in the direction opposite to the gravity direction 102, of the surface of the seed crystal 101 is covered with a shield 107 to suppress crystal growth from the upper-side area of the seed crystal 101.</p> |
