| 发明名称 |
MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES |
| 摘要 |
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures. |
| 申请公布号 |
US2014297968(A1) |
申请公布日期 |
2014.10.02 |
| 申请号 |
US201414306792 |
申请日期 |
2014.06.17 |
| 申请人 |
PARK Jeong Heon;LIM Woo Chang;OH Se Chung;KIM Young Hyun;PARK Sang Hwan;LEE Jang Eun |
发明人 |
PARK Jeong Heon;LIM Woo Chang;OH Se Chung;KIM Young Hyun;PARK Sang Hwan;LEE Jang Eun |
| 分类号 |
H01L43/02;G06F13/16;H01L43/10 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic tunneling junction device comprising:
a first structure including a magnetic layer; a second structure including a first extrinsic perpendicular magnetization layer; a second extrinsic perpendicular magnetization layer; a first non-magnetic layer disposed on the first extrinsic perpendicular magnetization layer; a second non-magnetic layer disposed on the second extrinsic perpendicular magnetization layer; and a third non-magnetic layer disposed on the second non-magnetic layer. |
| 地址 |
Hwaseong-si KR |
