SEMICONDUCTOR DEVICE HAVING PLANAR SOURCE ELECTRODE

摘要

A semiconductor device includes a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns. The source pattern includes: grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer between the cell trench patterns, source regions at the inclined sidewalls of the grooves, source isolation regions at the bottoms of the grooves, and a source electrode at interior regions of the grooves and that has a planar upper surface.

主权项

1. A semiconductor device, comprising:
a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns, wherein the source pattern includes:
grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer between the cell trench patterns,source regions at the inclined sidewalls of the grooves,source isolation regions at the bottoms of the grooves, anda source electrode at interior regions of the grooves and that has a planar upper surface.