SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a plurality of bit lines. The active area array a plurality of active area columns and a plurality of active area rows, defining an array of active areas. The substrate has two recesses formed at the central region thereof. Each recessed gate structure is respectively disposed in the recess. A protruding structure is formed on the substrate in each recess. A STI structure of the isolation structure is arranged between each pair of adjacent active area rows. Word lines are disposed in the substrate, each electrically connecting the gate structures there-under. Bit lines are disposed above the active areas, forming a crossing pattern with the word lines.

主权项

1. A semiconductor electronic device structure, comprising:
a substrate having an active area array disposed therein, the active area array including a plurality of crossingly arranged active area columns and active area rows, defining a plurality of active areas,
wherein the central region of each active area has a pair of recesses disposed therein,
wherein the bottom portion of each recess is formed with a protruding structure protruding from a bottom surface thereof,wherein a first doped area is formed between the pair of recesses in the central region of each active area,wherein a second doped area is respectively formed on the opposite ends of the central region in each active area; an insulation structure formed in the substrate, comprising a plurality of shallow trench isolation structures correspondingly arranged between each pair of adjacent active area rows; a plurality of recessed gate structures respectively formed in each recess; a plurality of word lines embeddedly disposed in the substrate along the direction of the active area columns in electrical connection with a plurality of recessed gate structures in the corresponding active area columns underneath; and a plurality of bit lines disposed above the active area correspondingly in electrical connection with a first doped area in each of the active area rows and forming a crossing pattern with the word lines.