| 发明名称 |
SOLUTION COMPOSITION FOR FORMING OXIDE SEMICONDUCTOR, AND OXIDE SEMICONDUCTOR AND ELECTRONIC DEVICE INCLUDING THE SAME |
| 摘要 |
A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof. |
| 申请公布号 |
US2014291664(A1) |
申请公布日期 |
2014.10.02 |
| 申请号 |
US201314043324 |
申请日期 |
2013.10.01 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEON Jong-baek;RYU Myung-kwan;LEE Sang-yoon |
| 分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solution composition for forming an oxide semiconductor, comprising:
a metal oxide precursor; and one of a metal thioacetate and a derivative thereof. |
| 地址 |
Suwon-Si KR |
