THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME

摘要

A thin-film transistor, a method for manufacturing the same and a display device including the same are provided. The thin-film transistor may include a substrate, and an active layer formed on the substrate. The active layer may be made from an oxide semiconductor. A gate electrode may be formed above the active layer or below the active layer. A conductive layer may come in contact with the active layer, may be overlapped with at least a part of the gate electrode, and may be insulated from the gate electrode. A source electrode and a drain electrode may be electrically connected to the active layer. The conductive layer can reduce a channel length of the thin-film transistor and increase a capacitance between the source electrode and the gate electrode or between the drain electrode and the gate electrode.

主权项

1. An thin-film transistor comprising:
a gate electrode disposed on an insulating layer, an active layer disposed on a substrate below the insulating layer, the active layer comprising a first region that laterally overlaps with the gate electrode, a first portion of the first region comprising a channel of the transistor; a source electrode and a drain electrode each electrically connected to the active layer; and one or more conductive layers, each conductive layer electrically connected to either the source or drain electrode, each conductive layer laterally overlapping and directly physically contacting a second portion of the first region of the active layer to reduce a length of the channel.