| 摘要 |
This gas production apparatus is provided with: a laminate which is obtained by laminating multiple elements in series, each of the multiple elements bearing semiconductor thin films that form a pn junction therebetween, and which has a light-receiving section on one side and a conductive substrate on the other side; a hydrogen gas production section which is formed on the surface of a first element present on the light-receiving section side; a first electrolysis chamber which includes the hydrogen gas production section; an oxygen gas production section which is formed on the back surface of the conductive substrate; a second electrolysis chamber which includes the oxygen gas production section; and an ion-permeable and gas-impermeable diaphragm provided between the first and second electrolysis chambers. |
