| 摘要 |
The present application pertains to a photoelectric conversion element equipped with a semiconductor (1), an intrinsic layer (4) containing hydrogenated amorphous silicon and provided on the semiconductor (1), a first-conductive-type layer (6), a second-conductive-type layer (8), a first insulating layer (5) for covering part of the intrinsic layer (4), a first electrode (9), and a second electrode (10), the photoelectric conversion element being characterized in that a part of the first-conductive-type layer (6) and a part of the second-conductive-type layer (8) are positioned above the region where the intrinsic layer (4) and the first insulating layer (5) contact one another. |
