| 摘要 |
Provided is a zinc oxide sputtering target allowing a sputtered transparent zinc oxide electroconductive film to be formed more rapidly while keeping arcing to a minimum. This zinc oxide sputtering target comprises a zinc oxide sintered compact mainly including zinc oxide crystal particles, the degree of (002) orientation on the sputtered surface being at least 50%, and the density being at least 5.30 g/cm3. |
