| 摘要 |
PROBLEM TO BE SOLVED: To enable downsizing of an element area.SOLUTION: A semiconductor device manufacturing method comprises: a process (a) of forming a first conductivity type first buried diffusion layer on a second conductivity type semiconductor substrate; a process (b) of forming a first impurity region on a first surface of the semiconductor substrate at a first position by implanting a first conductivity type impurity; a process (c) of diffusing the first buried diffusion layer and the first impurity region by performing a first heat treatment on the semiconductor substrate not to connect the first buried diffusion layer and the first impurity region; a process (d) of forming a second impurity region on the first surface at a second position by implanting the first conductivity type impurity with a concentration higher than that in the process (b); and a process (e) of diffusing the first buried diffusion layer, the first impurity region and the second impurity region by performing a second heat treatment on the semiconductor substrate. |
