| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a three-dimensional structure which achieves improvement in reliability by improving bondability between substrates to inhibit the occurrence of voids; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device 1 comprises: a first substrate 2 which includes a first electrode 33 and a first insulation film 35, and has a bonding surface 41 that exposes the first electrode 33 and the first insulation film 35; a second substrate 7 which includes a second electrode 67 electrically connected to the first electrode 33 and a second insulation film 69, and has a bonding surface 71 that exposes the second electrode 67 and the second insulation film 69, and which is bonded to the first substrate 2; and an insulating thin film 12 sandwiched between bonding surfaces 41, 71 of the respective substrates. The insulating thin film is manufactured by a method of making the insulating thin film broken down by grain growth and the like of the first and second electrodes caused by a heat treatment and bringing the electrodes into contact with each other. |
