| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a metallic thin film for electronic component consisting of a Mo alloy having improved moisture resistance or oxidation resistance, and capable of maintaining low electric resistance value even through a heating process when forming the metallic thin film as a base film or a cap coating film on a low resistant main wiring film of Al or Cu, and to provide a Mo alloy sputtering target material for forming the metallic thin film.SOLUTION: There are provided a metallic thin film containing one or more kind selected from an element group A of Cr, Zr and Ta of total 3 atom% or more, Ni of 10 to 45 atom%, where total of the element group A and the Ni of 50 atom% or less, and the balance Mo with inevitable impurities, and a Mo alloy sputtering target material for forming the metallic thin film containing one or more kind selected from the element group A of Cr, Zr and Ta of total 3 atom% or more, Ni of 10 to 45 atom%, where total of the element group A and the Ni of 50 atom% or less, and the balance Mo with inevitable impurities.</p> |
