发明名称 METHOD FOR PRODUCING PERIODIC TABLE GROUP 13 METAL NITRIDE SEMICONDUCTOR CRYSTAL
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for resolving problems associated with charging of a solvent containing nitrogen atoms in a reaction vessel in ammonothermal process to grow a crystal smoothly and stably.SOLUTION: The aforementioned problems may be solved and a periodic table group 13 metal nitride semiconductor crystal may be grown smoothly and stably by charging a solvent with a region of 40% or more inside a reaction vessel set to -100°C or more and -30°C or less.</p>
申请公布号 JP2014185038(A) 申请公布日期 2014.10.02
申请号 JP20130058979 申请日期 2013.03.21
申请人 MITSUBISHI CHEMICALS CORP 发明人 ISHINABE TAKAYUKI;FUJISAWA HIDEO
分类号 C30B29/38;C30B7/10 主分类号 C30B29/38
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