发明名称 |
METHOD FOR PRODUCING PERIODIC TABLE GROUP 13 METAL NITRIDE SEMICONDUCTOR CRYSTAL |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for resolving problems associated with charging of a solvent containing nitrogen atoms in a reaction vessel in ammonothermal process to grow a crystal smoothly and stably.SOLUTION: The aforementioned problems may be solved and a periodic table group 13 metal nitride semiconductor crystal may be grown smoothly and stably by charging a solvent with a region of 40% or more inside a reaction vessel set to -100°C or more and -30°C or less.</p> |
申请公布号 |
JP2014185038(A) |
申请公布日期 |
2014.10.02 |
申请号 |
JP20130058979 |
申请日期 |
2013.03.21 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
ISHINABE TAKAYUKI;FUJISAWA HIDEO |
分类号 |
C30B29/38;C30B7/10 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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