TID Hardened and Single Even Transient Single Event Latchup Resistant MOS Transistors and Fabrication Process

摘要

A radiation-hardened transistor is formed in a p-type body. An active region is disposed within the p-type body and has a perimeter defined by a shallow-trench isolation region filled with a dielectric material. Spaced-apart source and drain regions are disposed in the active region, forming a channel therebetween. A polysilicon gate is disposed above, aligned with, and insulated from the channel region. A p-type isolation ring is disposed in the p-type body separating outer edges of at least one of the source and drain regions from the perimeter of the active region. A body contact is disposed in the p-type isolation ring.

主权项

1. A radiation-hardened transistor, comprising:
a p-type body; an active region within the p-type body having a perimeter defined by a shallow-trench isolation region filled with a dielectric material; spaced-apart n-type source and drain regions disposed in the active region, forming a channel therebetween; a polysilicon gate disposed above, aligned with, and insulated from the channel region; and a p-type isolation region in the p-type body separating outer edges of at least one of the source and drain regions from the perimeter of the active region.