| 摘要 |
<p>A method for producing a sapphire single crystal by a melt growth method, including: (i) a step for observing, by an optical means, the interface between a raw material melt and a sapphire single crystal during growth and thereby obtaining image data; (ii) a step for analyzing the image data and thereby obtaining a calculated value for the single crystal diameter; and (iii) a step for growing the sapphire single crystal while controlling the single crystal diameter on the basis of the calculated value, (A) step (i) including a step for removing at least some of light corresponding to wavelengths exceeding 620 nm from the light incident on the optical means, or (B) step (ii) including a step for removing at least some of the component contributed by light corresponding to wavelengths exceeding 620 nm from the brightness information in the image data and thereby generating secondary image data, and a step for analyzing the secondary image data and thereby obtaining the calculated value for the single crystal diameter.</p> |
