<p>Disclosed is a fin manufacturing method. An exemplary method may include: forming a mask layer on a substrate; constructing the mask layer to form an opening; and developing a semi-conductor layer on the substrate by using the opening, to form a fin.</p>
申请公布号
WO2014153799(A1)
申请公布日期
2014.10.02
申请号
WO2013CN74772
申请日期
2013.04.26
申请人
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES
