METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE AND POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a power semiconductor device capable of improving product reliability by suppressing thermal expansion and thermal contraction by a cold heat cycle, and a power semiconductor device manufactured by the method.SOLUTION: A method for manufacturing a power semiconductor device comprising a base substrate having a conductor layer on a surface thereof and a semiconductor element mounted on the base substrate according to an embodiment includes a step of forming a curing layer on a surface of the conductor layer.