| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition exhibiting good line edge roughness and a good mask error factor.SOLUTION: The resist composition comprises a resin having a structural unit derived from a compound expressed by formula (aa) and an acid generator comprising a salt expressed by formula (I). In the formulae, T represents an alicyclic hydrocarbon group which may have a substituent, in which -CH- included in the group is substituted with at least one -SO- and further may be substituted with -CO-, -O-, or the like; Rrepresents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; Zrepresents a saturated hydrocarbon group which may have a substituent, or the like; Qand Qrepresent a fluorine atom or a perfluoroalkyl group; Xrepresents a single bond or a saturated hydrocarbon group which may have a substituent; Yrepresents a linear or branched aliphatic hydrocarbon group, or the like; and Zrepresents an organic counter cation. |
