METHODS FOR GROWING III-V MATERIALS ON A NON III-V MATERIAL SUBSTRATE

摘要

The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilisation of dislocation faults in a surface layer of the non III-V material wafer in an orientation relative to an epitaxial material growing direction during growing of the III-V materials, wherein the location stabilised dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the III-V materials during the epitaxial growth process.

主权项

1. A method for epitaxial growing of at least one III-V group material on top of a substrate or wafer of a non III-V group material, wherein the method comprises a step of providing a pre-processing of a clean wafer with a respective first deposited nucleation layer and a respective second deposited bulk material layer, wherein
the material composition formed in the pre-processing step is further treated to form an interfacial misfit layer by exposing the material composition from the pre-processing step to a low pressure in a range of 1·10−8 Torr to 3·10−8 Torr, at a temperature in the range of 400° C. to 600° C. for a time interval of 10 seconds to 70 minutes before the treated material composition from the pre-processing step further is grown in an epitaxial process with the at least one III-V group material.