Semiconductor Substrate and a Method of Manufacturing the Same

摘要

The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×1012 cm−3.

主权项

1. A semiconductor substrate comprising a semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material comprises a base doping and donor impurity atoms different from the base doping or a base doping and crystal defects, wherein the donor impurity atoms comprise selenium (Se), a concentration of the donor impurity atoms being larger than 1×1012 cm−3, wherein the semiconductor substrate includes an electronic device zone comprising the selenium (Se) atoms, and wherein a region of the semiconductor substrate comprising the selenium (Se) atoms forms at least a portion of a drift or base region of the electronic device.