| 摘要 |
<p>In the present invention, in a structure that ensures a withstand voltage of a semiconductor device by providing channel stop regions in a semiconductor substrate area from the outer circumferential side surface to the front surface thereof, the channel stop regions are formed in a plurality of regions having different impurity concentrations. At that time, the channel stop regions are formed to have a relationship wherein the impurity concentration is increased toward the outer circumferential side surface of the semiconductor substrate, and the depth of the high impurity concentration region is equal to or more than the depth of the low impurity concentration region. Electric field concentration at the periphery of the channel stop regions is relaxed, and the withstand voltage of the semiconductor device is increased.</p> |
