METHOD FOR PRODUCING GAMMA-CSSNI3 AND USE OF GAMMA-CSSNI3, CS1-XAXB1-YCYI3-ZXZ, BII3 OR BI1-XMI3-YXY FOR THIN-LAYER TRANSISTORS

摘要

The invention relates to the production of ϒ-caesium-tin-iodide from a caesium-tin-iodide solution, wherein the solvent is evaporated and the caesium-tin-iodide is then thermally treated, and to a solvent-based application of ϒ-caesium-tin-iodide, Cs1-xAxB1-yCyI3, Bi1-xMI3-yXy or bismuth-iodide to a substrate and use as semi-conductor material in transistor structures, wherein a CsSnI3 solution, a Cs1-xAxB1-yCyI3-zXz-solution, a Bi1-xMxI3-yXy-solution or a BiI3-solution is applied to a substrate using pressure technologies, wherein the application is carried out under an inert atmosphere and/or vacuum using a CsSnI3-solution.