MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To improve the operation speed of a gate and lower a leakage current.SOLUTION: A manufacture method of a semiconductor device includes the steps of: carrying a substrate where a high dielectric constant film and a metal containing film are formed into a processing chamber 10; supplying a process gas to an area above the substrate 11 carried into the processing chamber 10; and supplying micro waves to the substrate 11. The high dielectric constant film is formed on the substrate 11 through a silicon oxide film and the metal containing film is formed on the high dielectric constant film.