| 摘要 |
PROBLEM TO BE SOLVED: To provide: a bonding material which allows base materials of ceramic, semiconductor, glass or the like to be bonded together at a process temperature as low as a temperature required for a solder material without performing a metallization process; and a bonded structure.SOLUTION: The bonded structure comprises: a bonding layer 103; and base materials 101 and 102 bonded together through the bonding layer 103. In the bonded structure, at least one of the base materials is one base material of a ceramic, semiconductor and glass. The bonding material layer 103 includes a metal 104 and an oxide 105. The oxide 105 includes V and Te. The oxide 105 is located between the metal 104 and the base material. The bonding material is composed of: a form of paste including an oxide glass including V and Te as components, metal particles and solvent; a piece of foil or plate in which particles of the oxide glass including V and Te as components are embedded; or a piece of foil or plate including a layer of the oxide glass including V and Te as components and a layer of the metal 104. |
